Efficient Modulation of InP-Based 1.3μm VCSELs with AsSb-Based DBRs
نویسنده
چکیده
We demonstrate efficient, error-free 3.125Gb/s modulation of InP-based 1.3μm VCSELs with AsSb-based DBRs up to 60°C. These devices demonstrated high differential efficiencies (>60% at room-temperature), which resulted in a required bias current for modulation of only 5.9mA. The measured extinction ratios were greater than 8dB up to 60°C with a peak-to-peak drive voltage of only 800mV. The 3dB-down room-temperature small-signal bandwidth was 4.4GHz at a bias of 5.9mA.
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تاریخ انتشار 2005